Development of a low-impedance traveling wave amplifier based on InAlAs/InGaAs/InP-HFET for 20 Gb/s optoelectronic receivers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 642-645

  van Waasen, S ^a   Janssen, G ^a   Bertenburg, R M ^a   Reuter, R ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SOFTWARE; FIELD EFFECT TRANSISTORS; OPTICAL COMMUNICATION EQUIPMENT; OPTOELECTRONIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SIGNAL RECEIVERS; TRANSFER FUNCTIONS;

OPTOELECTRONIC RECEIVERS; TRAVELING WAVE AMPLIFIER;

LIGHT AMPLIFIERS;

EID: 0029706033     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)