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Journal of Crystal Growth

Volumn 150, Issue , 1995, Pages 277-284

New frontiers of molecular beam epitaxy with in-situ processing

(1) Hong, M a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; FABRICATION; IN SITU PROCESSING; PLASMA ETCHING; PLASMAS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

CHEMICAL ETCHING; PLASMA TREATMENT; ULTRAHIGH VACUUM;

MOLECULAR BEAM EPITAXY;

EID: 0029308904 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)80221-W Document Type: Article

Times cited : (33)

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