Comparative analysis of the optical quality of single In 0.1Ga0.9As/Al0.33Ga0.67As quantum wells grown by molecular beam epitaxy on (100) and (311) GaAs substrates

Applied Physics Letters

Volumn 67, Issue , 1995, Pages 1885-

  Brandt, O ^a   Kanamoto, K ^a   Tsugami, M ^a   Isu, T ^a   Tsukada, N ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

CARRIER INJECTION; FREE CARRIERS; HEAVY HOLE EXCITONS; NON RADIATIVE RECOMBINATION; RADIATIVE RECOMBINATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029375525     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.114365     Document Type: Article

References (0)