Quantitative Chemical Depth Profiles of Anodic Oxide on GaAs Obtained by X-Ray Photoelectron Spectroscopy

Journal of the Electrochemical Society

Volumn 126, Issue 8, 1979, Pages 1370-1374

  Mizokawa, Yusuke ^a   Iwasaki, Hiroshi ^b   Nishitani, Ryusuke ^b   Nakamura, Shogo ^b  

^a Osaka Prefecture University   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

anodic film; depth profile; ESCA analysis; GaAs; passivation

Indexed keywords

GALLIUM ARSENIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0018506777     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2129281     Document Type: Article

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