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Volumn 421, Issue , 1996, Pages 81-92
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Low interface state density oxide-GaAs structures fabricated by in-situ molecular beam epitaxy
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL ATOMIC STRUCTURE;
DEPOSITION;
ELECTRONIC PROPERTIES;
HETEROJUNCTIONS;
INTERFACES (MATERIALS);
MOLECULAR BEAM EPITAXY;
OXIDES;
PHOTOCHEMICAL REACTIONS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE STRUCTURES;
THERMODYNAMIC STABILITY;
IN SITU DEPOSITION;
LOW INTERFACE STATE DENSITY OXIDE;
OXIDE FILMS;
PHOTOCHEMICAL STABILITY;
ELECTRONIC DENSITY OF STATES;
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EID: 0030377120
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-421-81 Document Type: Conference Paper |
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Times cited : (6)
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References (25)
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