Investigation of the polarity asymmetry on the electrical characteristics of thin polyoxides grown on N+ polysilicon

IEEE Transactions on Electron Devices

Volumn 44, Issue 1, 1997, Pages 153-159

  Wu, Shye Lin ^a,b   Chen, Chun Yuan ^a   Lin, Ta Yow ^a   Lee, Chung Len ^a   Lei, Tan Fu ^a   Liang, Mong Song ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b POWERCHIP TECHNOLOGY CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON TUNNELING; ELECTRONS; INTERFACES (MATERIALS); OXIDES; SEMICONDUCTOR DOPING; SILICA; SILICON WAFERS; THERMAL EFFECTS; THERMOOXIDATION;

ELECTRICAL CHARACTERISTICS; POLARITY ASYMMETRY; THIN POLYOXIDES;

THIN FILMS;

EID: 0030834631     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.554805     Document Type: Article

References (20)

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