Characterization of Thermally Oxidized n+Polycrystalline Silicon

IEEE Transactions on Electron Devices

Volumn 32, Issue 3, 1985, Pages 577-583

  Faraone, Lorenzo ^a   Vibronek, Robert D ^a   Mcginn, Joseph T ^a  

^a FCA UNESP   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS; SEMICONDUCTING FILMS - DOPING;

DRY-OXIDIZED DIFFUSION-DOPED FILMS; OXIDE-POLYSILICON INTERFACE; POLYCRYSTALLINE SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0022029355     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.21980     Document Type: Article

References (22)

1. D. J. Di Maria and D. R. Kerr, “Interface effects and high conductivity in oxides grown from polycrystalline silicon,” Appl. Phys. Lett., vol. 27, pp. 505–507, 1975
2. E. A. Irene, E. Tierney, and D. W. Dong, “Silicon oxidation studies: Morphological aspects of the oxidation of polycrystalline silicon,” J. Electrochem. Soc., vol. 127, pp. 705–713, 1980
3. R. M. Anderson and D. R. Kerr, “Evidence for surface asperity mechanism of conductivity in oxide grown on polycrystalline silicon,” J. Appl. Phys., vol. 48, pp. 4834–4836, 1977
4. G. Harbeke, L. Krausbauer, E. F. Steigmeier, A. E. Widmer, H. F. Kappert, and G. Neugebauer, “High quality polysilicon by amorphous low pressure chemical vapor deposition,” Appl. Phys. Lett., vol. 42, pp. 249–251, 1983.
5. E. Kinsbron, M. Sternheim, and R. Knoell, “Crystallization of amorphous silicon films during low pressure chemical vapor deposition,” Appl. Phys. Lett., vol. 42, pp. 835–837, 1983
6. G. Harbeke, L. Krausbauer, E. F. Steigrneier, A. E. Widmer, H. F. Kappert, and G. Neugebauer, “LPCVD polycrystalline silicon: Growth and physical properties of in-situ phosphorus doped and undoped films,” RCA Rev., vol. 44, pp. 287–312, 1983
7. M. T. Duffy, J. T. McGinn, J. M. Shaw, R. T. Smith, R. A. Soltis, and G. Harbeke, “LPCVD polycrystalline silicon: Growth and physical properties of diffusion-doped, ion-implanted, and undoped doped films,” RCA Rev., vol. 44, pp. 313–325, 1983
8. Y. Wada and S. Nishimatsu, “Grain growth mechanism of heavily phosphorus-implanted polycrystalline silicon,” J. Electrochem. Soc., vol. 125, pp. 1499–1504, 1978
9. L. Mei, M. Rivier, Y. Kwark, and R. W. Dutton, “Grain-growth mechanisms in polysilicon,” J. Electrochem. Soc., vol. 129, pp. 1791–1795, 1982
10. H. R. Huff, R. D. Halvorson, T. L. Chiu, and D. Guterman, “Experimental observations on conduction through polysilicon oxide,” J. Electrochem. Soc., vol. 127, pp. 2482–2488, 1980
11. P. A. Heimann, S. P. Muraka, and T. T. Sheng, “Electrical conduction and breakdown in oxides of polycrystalline silicon and their correlation with interface texture,” J. Appl. Phys., vol. 53, pp. 6240–6245, 1982
12. D. K. Brown and C. A. Barile, “Ramp breakdown study of double polysilicon RAM's as a function of fabrication parameters,” J. Electrochem. Soc., vol. 130, pp. 1597–1603, 1983
13. M. Sternheim, E. Kinsbron, J. Alspectror, and P. A. Heimann, “Properties of thermal oxides grown on phosphorus in-situ doped polysilicon,” J. Electrochem. Soc., vol. 130, pp. 1735–1740, 1983
14. K. C. Saraswat and H. Singh, “Thermal oxidation of heavily phosphorus-doped thin films of polycrystalline silicon,” J. Electrochem. trochem. Soc., vol. 129, pp. 2321–2326, 1982
15. E. J. Korma, J. Snijder, and J. F. Verweij, “Si0 2 layers on poly-crystalline silicon,” in Insulating Films on Semiconductors, J. F. Verweij and D. R. Wolters, Eds. Amsterdam, The Netherlands: North-Holland, 1983, pp. 278–281
16. M. Conti, G. Corda, and R. Gastaldi, “Electric conduction and charge distribution in poly-oxide-poly silicon structures,” in Insulating Films on Semiconductors, G. G. Roberts, Ed. England: Inst. of Physics, 1980, pp. 55–61
17. M. S. Abrahams and C. J. Buiocchi, “Cross-sectional specimens for transmission electron microscopy,” J. AppL Phys., vol. 45, pp. 3315–3316, 1974
18. J. T. McGinn, H. F. Kappert, L. Krausbauer, J. M. Shaw, and A. E. Widmer, in Proc. Electrochem. Soc. Spring Meeting, Abstract 414, San Francisco, CA, 1983
19. D. J. Mazey, R. S. Nelson, and R. S. Barnes, “Observation of ion bombardment damage in silicon,” Phil. Mag., vol. 17, pp. 1145–1161, 1161, 1968
20. Z. A. Weinberg, “On tunneling in metal-oxide-silicon structures,” J. Appl. Phys., vol. 53, pp. 5052–5056, 1982
21. L. Faraone, RCA Labs., Princeton, NJ 08540, unpublished.
22. J. M. Shaw, RCA Labs., Princeton, NJ 08540, private communication.