256-KBIT FLASH E2PROM USING TRIPLE-POLYSILICON TECHNOLOGY.

IEEE Journal of Solid-State Circuits

Volumn SC-22, Issue 4, 1987, Pages 548-552

  Masuoka, Fujio ^a   Asano, Masamichi ^a   Iwahashi, Hiroshi ^a   Komuro, Teisuke ^a   Tozawa, Noriyoshi ^a   Tanaka, Shinichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS; INTEGRATED CIRCUITS, DIGITAL;

FLASH ELECTRICALLY ERASABLE PROM; TRIPLE-POLYSILICON TECHNOLOGY;

DATA STORAGE, DIGITAL;

EID: 0023401878     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/jssc.1987.1052771     Document Type: Article

References (6)