SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Journal of Applied Physics

Volumn 72, Issue 4, 1992, Pages 1378-1385

Characterization of ultrathin oxide prepared by low-temperature wafer loading and nitrogen preannealing before oxidation

(4) Wu, S L a Lee, C L a Lei, T F a Liang, M S b

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b MOS Electronics Inc ^* (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003546643 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.351749 Document Type: Article

Times cited : (9)

References (26)

1
- 0008743759
- The Submicron MOSFET
- edited by S. M. Sze (Wiley, New York), Chap. 3
- (1990) High-Speed Semiconductor Devices , pp. 139
- Brews, J.R.¹

2
- 0020267734
- (1982) IEDM Tech. Dig. , pp. 54
- Lifshitz, N.¹ Luryi, S.²

3
- 0024896847
- (1989) IEDM Tech. Dig. , pp. 451
- Fukuda, H.¹ Arakawa, T.² Ohno, S.³

4
- 0022150892
- (1985) IEEE Trans. Electron. Devices , vol.32 , pp. 2485
- Hokari, Y.¹ Baba, T.² Kawamura, N.³

5
- 0344988292
- (1984) IEDM Tech. Dig. , pp. 152
- Liang, M.S.¹ Choi, J.Y.² Ko, P.K.³ Hu, C.⁴

6
- 0023386518
- (1987) IEEE Trans. Electron. Devices , vol.34 , pp. 1540
- Chen, C.F.¹ Wu, C.Y.² Lee, M.K.³ Chen, C.N.⁴

7
- 0018515418
- (1979) J. Electrochem. Soc. , vol.126 , pp. 1573
- Razouk, R.R.¹ Deal, B.E.²

8
- 0001275769
- (1985) Phys. Rev. B , vol.32 , pp. 8171
- Goodnick, S.M.¹ Ferry, D.K.² Wilmsen, C.W.³ Liliental, Z.⁴ Fathy, D.⁵ Krivanek, O.L.⁶

9
- 0026366788
- (1991) IEEE Electron. Dev. Lett. , vol.12 , pp. 652
- Ohmi, T.¹ Teramoto, A.² Miyashita, M.³

10
- 0014764318
- (1970) J. Bell Syst. Technol. , vol.49 , pp. 587
- Boyle, W.S.¹ Smith, G.E.²

11
- 0021973547
- (1985) Philips J. Res. , vol.40 , pp. 115
- Wolters, D.R.¹ van der Schoot, J.J.²

12
- 0022286033
- (1985) IEDM Tech. Dig. , pp. 372
- Abe, H.¹ Kiyosumi, F.² Yoshioka, K.³ Ino, M.⁴

13
- 0001225675
- (1985) IEEE Trans. Electron. Devices , vol.32 , pp. 423
- Yamabe, K.¹ Taniguchi, K.²

14
- 0040435591
- (1988) Appl. Phys. Lett. , vol.53 , pp. 743
- Ourmazd, A.¹ Rentschler, J.A.² Bevk, J.³

15
- 0026120604
- (1991) J. Electrochem. Soc. , vol.138 , pp. 807
- Ogura, A.¹

16
- 36549100130
- (1987) J. Appl. Phys. , vol.61 , pp. 545
- Bradley, R.M.¹

17
- 0347061588
- (1988) J. Appl. Phys. , vol.67 , pp. 6194
- Sasse, H.-E.¹ König, U.²

18
- 0022107950
- (1985) J. Electrochem. Soc. , vol.132 , pp. 1900
- Bhattacharyya, A.¹ Vorst, C.² Carim, A.H.³

19
- 0015742080
- (1973) Solid State Electron. , vol.16 , pp. 1367
- Brotherton, S.D.¹ Read, T.G.² Lamb, D.R.³ Willoughby, A.F.W.⁴

20
- 36449003352
- (1991) J. Appl. Phys. , vol.69 , pp. 1113
- Schwalke, U.¹ Kerber, M.² Mazure, C.³ Breithaupt, B.⁴

21
- 0026172458
- (1991) J. Electrochem. Soc. , vol.138 , pp. 1756
- Chao, T.S.¹ Lee, C.L.² Lei, T.F.³

22
- 0014805372
- (1970) Solid State Electron. , vol.13 , pp. 873
- Kuhn, M.¹

23
- 0001299440
- (1990) Appl. Phys. Lett. , vol.57 , pp. 2808
- Ting, W.¹ Hwang, H.² Lee, J.³ Kwong, D.L.⁴

24
- 36849097956
- (1969) J. Appl. Phys. , vol.40 , pp. 278
- Lenzlinger, M.¹ Snow, E.H.²

25
- 0019665266
- (1981) IEDM Tech. Dig. , pp. 396
- Liang, M.S.¹ Hu, C.²

26
- 84941504025
- (1985) IEEE Trans. Electron. Devices , vol.32 , pp. 413
- Chen, I.C.¹ Holland, S.E.² Hu, C.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.