Silicon Oxidation Studies: Morphological Aspects of the Oxidation of Polycrystalline Silicon

Journal of the Electrochemical Society

Volumn 127, Issue 3, 1980, Pages 705-713

  Irene, E A ^a   Tierney, E ^a   Dong, D W ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

dielectric; films; oxidation

Indexed keywords

SILICON AND ALLOYS - OXIDATION;

SEMICONDUCTING SILICON;

EID: 0018996384     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2129737     Document Type: Article

References (16)

1. T. I. Kamins and E. L. MacKenna, Metall. Trans., 2,2292 (1971).
2. R. M. Anderson and D. R. Kerr, J. Appl. Phys., 48, 4834 (1977).
3. S. A. Abbas and C. A. Barile, in 13th Annual Proceedings, Reliability Physics Symposium, IEEE, Las Vegas, 1975.
4. D. J. DiMaria and D. R. Kerr, Appl. Phys. Lett., 27,507 (1975).
5. E. A. Irene, in “Proceedings of the International Topical Conference on The Physics of SiO2 and its interfaces,” S. T. Pantelides, Editor, Pergamon Press, New York (1978).
6. E. A. Irene, Paper 186 presented at The Electrochemical Society Meeting, Pittsburgh, Pennsylvania, Oct. 15–20, 1978.
7. E. A. Irene, V. J. Silvestri, and G. R. Woolhouse, J. Electron. Mater., 4, 409 (1975).
8. R. M. Finne and D. L. Klein, Journal of the Electrochemical Society, 114, 965 (1967).
9. E. A. Irene, J. Electron. Mater., 5, 287 (1976).
10. R. M. Anderson, Journal of the Electrochemical Society, 120,1540 (1973).
11. J. M. Fairfield and B. J. Masters, J. Appl. Phys., 38,3148 (1967).
12. Y. Sumitomo, K. Niwa, H. Sawazaki, and K. Sakai, in “Semiconductor Silicon 1973,” H. R. Huff and R. R. Burgess, Editors, p. 893, The Electrochemical Society Softbound Proceedings Series, Princeton, N.J. (1973).
13. T. Suzuki, A. Minura, and T. Ogawa, Journal of the Electrochemical Society, 124,1776 (1977).
14. F. R. N. Nabarro, in Bristol Conference on Strength of Solids, Physical Society, London, p. 75 (1948).
15. C. Herring, J. Appl. Phys., 21, 437 (1950).
16. E. Irene and E. Tierney, “Some Relationships Between the Oxidation Mechanism and the Electrical Reliability of Polycrystalline Silicon Films,” presented at the Twelfth Annual International Metallographic Society Meeting, Taminent, Penn., July 1979.