LOW LEAKAGE CURRENT POLYSILICON OXIDE GROWN BY TWO-STEP OXIDATION.

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1985, Pages 32-38

  Mikata, Y ^a   Mori, S ^a   Shinada, K ^a   Usami, T ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL - FIXED; LOGIC DEVICES - GATES; SILICON COMPOUNDS - FAILURE;

LEAKAGE CURRENT; POLYSILICON OXIDE;

INTEGRATED CIRCUITS, VLSI;

EID: 0022207689     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/irps.1985.362071     Document Type: Conference Paper

References (18)