RELIABILITY COMPARISON OF FLOTOX AND TEXTURED-POLYSILICON E**2PROMS.

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1987, Pages 85-92

  Mielke, Neal ^a   Fazio, Alberto ^a   Liou, Ho Chun ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL - FIXED; RELIABILITY;

EEPROM; FLOATING GATE TUNNEL OXIDE; FLOTOX; POLYSILICON; TEXTURED POLYSILICON;

DATA STORAGE, SEMICONDUCTOR;

EID: 0023209187     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (22)