Investigation of Si/SiGe-based FET geometries for high frequency performance by computer simulation

IEEE Transactions on Electron Devices

Volumn 44, Issue 1, 1997, Pages 80-88

  Neill, Anthony G ^a   Antoniadis, Dimitri A ^b  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; COMPUTER SIMULATION; ELECTROHYDRODYNAMICS; GAIN MEASUREMENT; MOS DEVICES; NATURAL FREQUENCIES; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE; VOLTAGE MEASUREMENT;

CUT OFF FREQUENCY; HIGH FREQUENCY PERFORMANCE;

FIELD EFFECT TRANSISTORS;

EID: 0030778012     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.554797     Document Type: Article

References (30)

1. R. Johnson, R. Teng, and J. W. Bälde, Ed., Mulüchip Modules: Systems Advantages, Major Constructions, and Materials Technologies. New York: IEEE Press, 1991.
2. R.G. Arnold and D. J. Redder, "Microwave characterization of microstrip lines and spiral inductors in MCM-D technology," IEEE Trans. Comp., Hybrids, Manufact. Technol., vol. 15, pp. 1038-1045, 1992.
3. Y. Taur, S. Wind, Y. Mil, Y. Lii, D. Moy, K. Jenkins, C. Chen, P. Coane, D. Klaus, J. Bucchignano, M. Rosenfield, M. Thomson, and M. Polcari, "High performance 0.1 ftm CMOS devices with 1.5 V power supply," in IEDM Tech. Dig., 1993, pp. 127-130.
4. M. Hanes, A. Agarwal, T. O'Keefe, H. Hobgood, J. Szedon, T. Smith, R. Siergiej, P. McMullin, H. Nathanson, M. Driver, and R. Thomas, "MICROX-An all silicon technology for monolithic microwave integrated circuits," IEEE Electron Device Lett., vol. 14, pp. 219-221, May 1993.
5. H. Fukui, "Optimal noise figure of microwave GaAs MESFET's," IEEE Trans. Electron Devices, vol. ED-26, pp. 1032-1037, 1979.
6. P.H. Ladbrooke, MMIC Design: GaAs FET's and HEMTs. Norwood, MA: Artech House, 1989.
7. A. Caviglia, R. Potter, and L. West, "Microwave performancce of SOI n-MOSFET's and coplanar waveguides," IEEE Electron Device Lett., vol. 12, pp. 26-27, Jan. 1991.
8. C. Raynaud, J. Gautier, G. Guegan, M. Lerme, E. Playez, and G. Dambrine, "High-frequency performance of submicrometer channellength silicon MOSFET's," IEEE Electron Device Lett., vol. 12, pp. 667-669, Dec. 1991.
9. N. Camilleri, J. Costa, D. Lovelace, and D. Ngo, "Silicon MOSFET's, the microwave device technology for the 90s," in Proc. IEEE MTT Symp., 1993, pp. 545-548.
10. P.W. Li, E. Yang, Y. Yang, J. Chu, and B. Meyerson, "SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing," IEEE Electron Device Lett., vol. 15, pp. 40205, Oct. 1994.
11. K. Ismail, S. Rishton, J. O. Chu, K. Chan, and B. S. Meyerson, "High performance Si/SiGe n-type modulation doped transistors," IEEE Electron Device Lett., vol. 14, pp. 348-350, July 1993.
12. K. Ismail, private communication.
13. M.M. Rieger and P. Vogl, "Electronic-band parameters in strained Sii-zGei; alloys on Sii_yGey substrates," Phys. Rev. B, vol. 48, pp. 14276-14287, 1993.
14. K. Ismail, S. Nelson, J. Chu, and B. Meyerson, "Electron transport properties of Si/SiGe heterostructures: Measurements and device implications," Appl. Phys. Lett., vol. 63, pp. 660-662, 1993.
15. M.C. Foisy, P. J. Tasker, B. Hughes, and L. F. Eastman, "The role of inefficient charge modulation in limiting the current-gain cutoff frequency of the MODFET," IEEE Trans. Electron Devices, vol. 35, pp. 871-877, 1988.
16. A.G. O'Neill and D. A. Antoniadis, "Deep submicron CMOS based on silicon germanium technology," IEEE Trans. Electron Devices, vol. 43, pp. 911-918, June 1996.
17. F.K. LeGoues, R. Rosenberg, T. Nguyen, F. Himpsel, and B. S. Meyersen, "Oxidation studies of SiGe," J. Appl. Phys., vol. 65, pp. 1724-1728, 1989.
18. R. Eisberg and R. Resnick, Quantum Physics of Atoms, Molecules, Solids, Nuclei and Particles, 2nd ed. New York: Wiley, 1985.
19. K. Ismail, J. O. Chu, K. L. Saenger, and B. S. Meyerson, "Modulationdoped n-type Si/SiGe with inverted interface," Appl. Phys. Lett., vol. 65, pp. 1248-1250, 1994.
20. S. Verdonkt-Vandebroek, E. F. Crabbe, B. S. Meyerson, D. L. Harame, P. J. Restle, J. Stork, and J. B. Johnson, "SiGe-channel heterojunction p-MOSFETS," IEEE Trans. Electron Devices, vol. 41, pp. 90-100, Jan. 1994.
21. H. Hu, J. B. Jacobs, L. T. Su, and D. A. Antoniadis, "A study of deepsubmicron MOSFET scaling based on experiment and simulation," IEEE Trans. Electron Devices, vol. 42, pp. 669-677, Apr. 1995.
22. TMA MEDICI Version 2.0, Technology Modeling Associates, Inc., 1994.
23. D.M. Caughey and R. E. Thomas, "Carrier mobilities in silicon empirically related to doping and field," Proc. IEEE, vol. 55, pp. 2192-2193, 1967.
24. A.G. Sabnis and J. T. Clemens, "Characterization of the electron mobility in the inverted (100) Si surface," in IEDM Tech. Dig., 1979, pp. 18-21.
25. K. Yamaguchi, "A mobility model for carriers in the MOS inversion layer", IEEE Trans. Electron Devices, vol. ED-30, pp. 658-663, 1983.
26. E.H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed, Oxford, U.K.: Claredon, 1988.
27. M. Pinto, E. Sangiori, and J. Bude, "Silicon MOS transconductance scaling into the overshoot regime," IEEE Electron Device Lett., vol. 14, pp. 375-378, 1993.
28. Y.P. Tsividis, Operation and Modeling of the MOS Transistor. New York: McGraw-Hill, 1987, p. 180.
29. M.V. Fischetti and S. E. Laux, "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures-Part II: Submicrometer MOSFET's," IEEE Trans. Electron Devices, vol. 38, pp. 650-659, 1991.
30. L.D. Nguyen, L. L. Larson, and U. K. Mishra, "Ultra-high-speed modulation-doped field-effect transistors: A tutorial review," Proc. IEEE, vol. 80, pp. 494-518, 1992.