SiGe pMOSFET's with Gate Oxide Fabricated by Microwave Electron Cyclotron Resonance Plasma Processing

IEEE Electron Device Letters

Volumn 15, Issue 10, 1994, Pages 402-405

  Li, P W ^a   Yang, E S ^a   Yang, Y F ^a   Chu, J O ^b   Meyerson, B S ^b  

^a Och Spine at New York Presbyterian Hospitals   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON RESONANCE; GATES (TRANSISTOR); PLASMA APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

GATE OXIDES; MICROWAVE ELECTRON CYCLOTRON RESONANCE PLASMA PROCESSING;

MOSFET DEVICES;

EID: 0028530427     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.320982     Document Type: Article

References (12)

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