High-Performance Si/SiGe n-Type Modulation-Doped Transistors

IEEE Electron Device Letters

Volumn 14, Issue 7, 1993, Pages 348-350

  Ismail, Khaled ^a   Rishton, S ^a   Chu, J O ^a   Chan, K ^a   Meyerson, B S ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GERMANIUM COMPOUNDS; JUNCTION GATE FIELD EFFECT TRANSISTORS; PERFORMANCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON COMPOUNDS; SUBSTRATES;

MODULATION DOPED TRANSISTORS; N TYPE MODULATION; SILICON GERMANIDE SUBSTRATE; SILICON SILICON GERMANIDE TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 0027629428     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.225569     Document Type: Article

References (5)

1. B. S. Meyerson, “UHV/CVD growth of Si and Si:Ge alloys: Chemistry, physics, and device applications,” Proc. IEEE, p. 1592, Oct. 1992.
2. U. Koenig, A. J. Boers, F. Schaeffler, and E. Kasper, “Enhancement mode n-channel Si/SiGe Modfet with high intrinsic transconductance,” Electron. Lett., vol. 28, p. 160, 1992.
3. K. Ismail et al., “High-transconductance n-type Si/SiGe modulation-doped field-effect transistors,” IEEE Electron. Device Lett., vol. 13, p. 229, 1992.
4. B. S. Meyerson, “Low temperature silicon epitaxy by UHV-CVD,” Appl. Phys. Lett., vol. 48, p. 797, 1986.
5. K. Ismail, S. F. Nelson, J. O. Chu, and B. S. Meyerson, to be published in Appl. Phys. Lett.