Degradation and recovery of in0. 53Ga0. 47as photodiodes by 1-MeV fast neutrons

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 3019-3026

  Ohyama, H ^a   Vanhellemont, J ^a   Takami, Y ^b   Hayama, K ^b   Kudou, T ^c   Hakata, T ^c   Kohiki, S ^d   Sunaga, H ^e  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b IMEC   (Belgium)

^c RIKKYO UNIVERSITY   (Japan)

^d NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

^e JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL LATTICES; ELECTRIC PROPERTIES; ELECTRONS; NEUTRON IRRADIATION; OPTICAL PROPERTIES; RADIATION DAMAGE;

FAST NEUTRONS; NONIONIZING ENERGY LOSS (NIEL);

PHOTODIODES;

EID: 0030353810     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556900     Document Type: Article

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