Deuterium in InGaAs/GaAs strained quantum wells: An optically active impurity

Semiconductor Science and Technology

Volumn 9, Issue 12, 1994, Pages 2233-2238

  Capizzi, M ^a   Polimeni, A ^a   Bonanni, B ^a   Emiliani, V ^a   Frova, A ^a   Marangio, D ^a   Martelli, F ^b  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

DEUTERIUM IRRADIATION; DISSOCIATION ENERGY; EXCITATION INTENSITY; IMPURITY BAND; RECOMBINATION CENTER; WELL WIDTH;

ANNEALING; ATOMS; BINDING ENERGY; COMPOSITION EFFECTS; DEUTERIUM; DOSIMETRY; EXCITONS; HELIUM; IMPURITIES; PHOTOLUMINESCENCE; THERMAL EFFECTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0028726991     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/9/12/012     Document Type: Article

References (0)