On the degradation of 1-MeV electron irradiated Sil-xGex diodes

IEEE Transactions on Nuclear Science

Volumn 41, Issue 3, 1994, Pages 487-494

  Ohyama, H ^a   Vanhellemont, J ^b   Poortmans, J ^b   Caymax, M ^b   Clauws, P ^c   Sunaga, H ^d  

^a TAKASAKI ADVANCED RADIATION RESEARCH INSTITUTE   (Japan)

^b IMEC   (Belgium)

^c GHENT UNIVERSITY   (Belgium)

^d KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL LATTICES; DEGRADATION; ELECTRIC PROPERTIES; ELECTRONS; EPITAXIAL GROWTH; PERFORMANCE; RADIATION DAMAGE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CAPACITANCE TEMPERATURE CHARACTERISTICS; ELECTRON CAPTURE LEVELS; ELECTRON FLUENCE; HIGH VOLTAGE TRANSMISSION ELECTRON MICROSCOPE; LATTICE DEFECTS;

SEMICONDUCTOR DIODES;

EID: 0028447082     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.299788     Document Type: Article

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