Radiation Effects ln Ga0.471n0.53As Devices

IEEE Transactions on Nuclear Science

Volumn 39, Issue 6, 1992, Pages 2257-2264

  Walters, R J ^a   Shaw, G J ^a   Summers, G P ^a   Burke, E A ^b   Messenger, S R ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SPIRE CORPORATION   (United States)

^c SFA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005124686     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.211429     Document Type: Article

References (19)

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2. E.A. Burke, “Energy Dependence of Proton-induced Displacement Damage in Silicon” IEEE Trans. Nucl. Sci., NS-33, 1276 (1986)
3. G.P. Summers, E.A. Burke, C.J. Dale, E.A. Wolicki, P.W. Marshall, and M.A. Gehlhausen, “Correlation of Particle Induced Displacement Damage in Si”, IEEE Trans. Nucl. Sci., NS-34, 1134 (1987)
4. E.A. Burke, C.J. Dale, A.B. Campbell, G.P. Summers, W.J. Stapor, M.A. Xapsos, T. Palmer, and R. Zuleeg, “Energy Dependence of Proton Induced Displacement Damage in GaAs”, IEEE Trans. Nucl. Sci., NS-34, 1220 (1987)
5. C.J. Dale, P.W. Marshall, E.A. Burke, G.P. Summers, and E.A. Wolicki, “High Energy Electron Induced Displacement Damage in Si”, IEEE Trans. Nucl. Sci., NS-35, 1208 (1988)
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7. G.P. Summers, E.A. Burke, D.B. Chrisey, M. Nastasi, and J.R. Tesmer, “Effect of Particle Induced Displacements on the Critical Temperature of YBa 2 Cu 3 O 7” Appl. Phys. Lett. 55, 1469 (1989)
8. R.J. Walters, S.R. Messenger, G.P. Summers, E.A. Burke, and C.J. Keavney, “Space Radiation Effects in InP Solar Cells”, IEEE Trans. Nuc. Sci., 38, 1153, Dec. 1991
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18. R.J. Walters, S.R. Messenger, G.P. Summers, E.A. Burke, and C.J. Keavney, “Proton and Electron Irradiation of MOCVD InP Solar Cells: Experimental Results and Modeling”, Proceedings of the Photo. Spec. Conf., Las Vegas, NV, October 1991
19. Y. Takeda, M. Kuzuhara, and A. Sasaki, “Properties of Zn-doped P-type Ga 0.47 In 0.53 As on InP Substrate”, Jap. J. Appl. Phys., 19, 899–903, May, 1980