Oxygen addition purification effect in InGaAs growth by hydride VPE

Journal of Crystal Growth

Volumn 69, Issue 2-3, 1984, Pages 613-615

  Makita, Kikuo ^a   Taguchi, Kenko ^a   Usui, Akira ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344277589     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(84)90373-7     Document Type: Article

References (10)

1. Vapor Phase Growth of InGaAsP/InP DH Structures by the Dual-Growth-Chamber Method