CONFIRMATION OF TUNNELING CURRENT VIA TRAPS BY DLTS MEASUREMENTS IN InGaAs PHOTODIODES.

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 22, Issue 6, 1983, Pages 364-366

  Trommer, R ^a   Albrecht, H ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING INDIUM COMPOUNDS;

INDIUM GALLIUM ARSENIDE;

SEMICONDUCTOR DIODES, PHOTODIODE;

EID: 0020763739     PISSN: None     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.22.l364     Document Type: Article

References (13)