Effect of lattice defects in the collector region of npn Si transistors on the degradation of hFE

physica status solidi (a)

Volumn 107, Issue 1, 1988, Pages 429-439

  Ohyama, H ^a   Nemoto, K ^a  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT - ANNEALING; SEMICONDUCTING SILICON - RADIATION EFFECTS; SPECTROSCOPIC ANALYSIS;

COMMON EMITTER CURRENT GAIN; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DEGRADATION;

TRANSISTORS;

EID: 0024016352     PISSN: 00318965     EISSN: 1521396X     Source Type: Journal    
DOI: 10.1002/pssa.2211070146     Document Type: Article

References (12)

1. Conparison of Neutron and 2 MeV Electron Damage in N-Type Silicon by Deep-Level Transient Spectroscopy
2. New Developments in Defect Studies in Semiconductors
3. Electron, Electron-Bremsstrahlung and Proton Depth-Dose Data for Space-Shielding Applications