Germanium content dependence of radiation damage in strained si1 xgexepitaxial devices

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2437-2442

  Hayama, K ^a   Ohyama, H ^b   Vanhellemont, J ^b   Poortmans, J ^b   Caymax, M ^b   Takami, Y ^c   Sunaga, H ^d   Clauws, P ^e  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b IMEC   (Belgium)

^c RIKKYO UNIVERSITY   (Japan)

^d TAKASAKI ADVANCED RADIATION RESEARCH INSTITUTE   (Japan)

^e GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; COMPOSITION EFFECTS; COMPUTATIONAL METHODS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; NEUTRONS; RADIATION DAMAGE; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES;

FAST NEUTRONS; FLUENCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0028714167     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340599     Document Type: Article

References (12)

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