5.5-MeV Proton Irradiation of a Strained Quantum-Well Laser Diode and a Multiple Quantum-Well Broad-Band LED.

IEEE Transactions on Nuclear Science

Volumn 40, Issue 6, 1993, Pages 1645-1654

  Evans, B D ^a   Hager, H E ^a   Hughlock, B W ^a  

^a BOEING COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FIBER OPTICS; LIGHT EMITTING DIODES; LIGHT SOURCES; PROTONS; RADIATION EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SIGNAL TO NOISE RATIO;

BROAD BAND LIGHT EMITTING DIODE; CONSTANT SLOPE EFFICIENCY; CURRENT THRESHOLD; PROTON IRRADIATION; QUANTUM WELL PHOTONIC DEVICE; STRAINED QUANTUM WELL LASER DIODE;

RADIATION DAMAGE;

EID: 0027851447     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273496     Document Type: Article

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