Electron mobilities in modulation doped Ga0.47In 0.53As/Al0.48In0.52 As heterojunctions grown by molecular beam epitaxy

Applied Physics Letters

Volumn 40, Issue 2, 1982, Pages 147-149

  Cheng, K Y ^a   Cho, A Y ^a   Drummond, T J ^b   Morkoc, H ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008986715     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.93018     Document Type: Article

References (13)