Quantum-well hall devices in Si-Delta-Doped Alo.25Gao.75As/GaAs and Pseudomorphic Alo.25Gao.75As/Ino.25Gao.75As/GaAs heterostructures grown by LP-MOCVD: Performance comparisons

IEEE Transactions on Electron Devices

Volumn 43, Issue 10, 1996, Pages 1665-1670

  Ahn, Kwang Ho ^a,b   Jeong, Yoon Ha ^b   Kim, Dae Mann ^b  

^a IEEE

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; FREQUENCY RESPONSE; HALL EFFECT; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SIGNAL TO NOISE RATIO; THERMAL EFFECTS;

ELECTRON MOBILITY; PSEUDOMORPHIC HETEROSTRUCTURES; QUANTUM WELL HALL DEVICES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030270699     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.536812     Document Type: Article

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