Alinas/inp delta-doped channel field effect transistor grown by organometallic chemical vapor deposition

Japanese Journal of Applied Physics

Volumn 31, Issue 2, 1992, Pages 66-67

  Jeong, Yoon Ha ^a   Jeong, Dong Ho ^a   Hong, Won Pyo ^a,b   Caneau, Catherine ^a,b   Bhat, Raje ^a,b   Hayes, John R ^a,b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b TELCORDIA TECHNOLOGIES   (United States)

Author keywords

AllnAs lnP; Delta doped; FET; OMCVD

Indexed keywords

ORGANOMETALLICS; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSISTORS, FIELD EFFECT;

DRAIN CURRENT DRIFTS; TRANSCONDUCTANCE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0026819170     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.31.L66     Document Type: Article

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