Highly-sensitive Hall element with quantum-well superlattice structures

Journal of Crystal Growth

Volumn 95, Issue 1-4, 1989, Pages 394-397

  Sugiyama, Y ^a   Soga, H ^a   Tacano, M ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES--HETEROJUNCTIONS;

QUANTUM WELLS; SUPERLATTICE STRUCTURES; TWO DIMENSIONAL ELECTRON GAS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0024606167     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(89)90427-2     Document Type: Article

References (8)

1. Proc. 6th Sensor Symp.
2. 1/f Noise in (AlGa)As/GaAs Heterostructure Van der Pauw element
3. Tech. Digest 4th Intern. Conf. on Solid-State Sensors and Actuators
4. (Invited) Analyses of 2D Electron Transport at a GaAs/AlGaAs Interface