SCOPUS 정보 검색 플랫폼

Volumn 43, Issue 1-3, 1994, Pages 135-140

High sensitivity hall sensors with low thermal drift using AlGaAs/InGaAs/GaAs heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT DEVICES; HETEROJUNCTIONS; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

MAGNETIC SENSORS; THERMAL DRIFT;

SENSORS;

EID: 0028427090 PISSN: 09244247 EISSN: None Source Type: Journal
DOI: 10.1016/0924-4247(93)00680-3 Document Type: Article

Times cited : (38)

References (9)

1
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- Highly sensitive Hall element with quantum well superlattice structure
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- Sugiyama¹ Soga² Tacano³

2
- 84918656887
- Y. Sugiyama, Y. Takeuchi and M. Tacano, Highly-sensitive 2DEG-Hall device made of pseudomorphic InGaAs heterostructure, Proc. 6th Int. Conf. Solid-State Sensors and Actuators (Transducers '91), San Francisco, CA, USA, June 24–28, 1991, pp. 1061-1064; Sensors and Actuators A, 34 (1992) 131–136

3
- 0003920493
- Adam Hilger, Bristol, Ch. 3
- (1991) Hall Effect Devices
- Popovic¹

4
- 0021372962
- Selectively dopedn-AlxGa1?xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors
- Selectively doped n-AlGaAs/GaAs heterostructures with high-mobility 2D electron gas for field effect transistors
- (1984) Applied Physics A Solids and Surfaces , vol.33 , pp. 63-76
- Schubert¹ Ploog² Dämbkes³ Heime⁴

5
- 3342901621
- 1-xAs alloys
- (1989) Phys. Rev. B , vol.39 , pp. 10063-10073
- Chadi¹ Chang²

6
- 0026624252
- Parameters of multilevel structure of the DX centre in GaAlAs from pressure studies of the Hall effect, and refs. therein
- (1992) Semiconductor Sci. Technol. , vol.7 , pp. 103-108
- Piotrzkowski¹ Litwin-Staszewska² Lorenzini³ Robert⁴

7
- 84918662265
- S. Contreras, P. Lorenzini, V. Mosser, J.L. Robert and R. Piotrzkowski, DX centers in AlGaAs:Si under pressure: electron statistics for negative-U and multilevel model, 5th High Pressure in Semiconductor Physics Conf. (HPSP 5), Kyoto, Japan, 1992; Jpn. J. Appl. Phys., 32 (Suppl. 32–1) (1993) 197–199

8
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- S. Contreras, L. Konczewicz, V. Mosser, J.L. Robert and K. Zekentes, Evidence for the 3 Al configuration of the DX center in the AlGaAs:Si alloy, in Ping Jiang and Hou-Zhi Zheng (eds.), Proc. 21st ICPS, Beijing China, 1992, World Scientific, Singapore

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.