A Novel δ-Doped GaAs/InGaAs Real-Space Transfer Transistor with High Peak-to-Valley Ratio and High Current Driving Capability

IEEE Electron Device Letters

Volumn 16, Issue 3, 1995, Pages 112-114

  Wu, Chang Luen ^a   Hsu, Wei Chou ^a   Tsai, Ming Shang ^a   Shieh, Hir Ming ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KUNG SHAN INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRODES; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLITHOGRAPHY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES;

CHARGE INJECTION TRANSISTOR; HIGH CURRENT DRIVING CAPABILITY; HIGH PEAK TO VALLEY RATIO; NEGATIVE RESISTANCE TRANSISTOR; REAL SPACE TRANSFER TRANSISTOR; TWO DIMENSIONAL ELECTRON GAS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029273499     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.363241     Document Type: Article

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