Temperature coefficient of resolution of lateral bipolar magnetotransistors

IEEE Transactions on Electron Devices

Volumn 40, Issue 5, 1993, Pages 910-917

  Kung, William ^a   Nathan, Arokia ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT DEVICES; MAGNETIC FIELDS; SIGNAL TO NOISE RATIO; WHITE NOISE;

COLLECTOR NOISE; DUAL-COLLECTOR MAGNETOTRANSISTORS; LATERAL BIPOLAR MAGNETOTRANSISTORS; MAGNETIC FIELD SENSORS;

BIPOLAR TRANSISTORS;

EID: 0027589729     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.210198     Document Type: Article

References (17)

1. A. Nathan, H. P. Baltes, D. R. Briglio, and M. T. Doan, “Noise correlation in dual-collector magnetotransistors,” IEEE Trans. Electron Devices, vol. 36, pp. 1073–1075, 1989.
2. S. Kordic, “Integrated 3-d magnetic sensor based on an NPN transistor,” IEEE Electron Device Lett., vol. EDL-7, pp. 196–198, 1986.
3. A. Nathan and H. P. Baltes, “Integrated silicon magnetotransistors: High sensitivity or high resolution,” Sensors and Actuators, vol. A21-A23, pp. 780–785, 1990.
4. L. J. Ristic, H. P. Baltes, T. Smy, and I. Filanovsky, “Suppressed sidewall injection magnetotransistor with focused emitter injection and carrier double deflection,” IEEE Electron Device Lett., vol. EDL-8, pp. 395–397, 1987.
5. L. J. Ristic, T. Smy, and H. P. Baltes, “A lateral magnetotransistor structure with a linear response to the magnetic field,” IEEE Trans. Electron Devices, vol. 36, pp. 1076–1086, 1989.
6. R. Castagnetti and H. P. Baltes, “PNP bipolar magnetotransistor for sensor application,” in 6th Int. Conf. on Solid-State Sensors and Actuators (Transducers '91) (San Francisco, CA, June 24–27), 1991, pp. 1065–1068.
7. A. Nathan and H. P. Baltes, “How to achieve nanotesla resolution with integrated silicon magnetotransistors,” in IEDM Tech. Dig., 1989, pp. 511–514.
8. A. Nathan, W. Kung, and T. Manku, “Silicon nanotesla magnetotransistors—Temperature coefficient of resolution,” in 6th Int. Conf. on Solid-State Sensors and Actuators (Transducers '91) (San Francisco, CA, June 25–29), 1991, pp. 1073–1076.
9. J. L. Plumb and E. R. Chenette, “Flicker noise in transistors,” IEEE Trans. Electron Devices, vol. ED-10, pp. 304–308, 1963.
10. M. Conti, “Surface and bulk effects in low frequency noise in NPN planar transistors,” Solid-State Electron., vol. 13, pp. 1461–1469, 1970.
11. R. C. Jaeger and A. J. Brodersen, “Low-frequency noise sources in bipolar junction transistors,” IEEE Trans. Electron Devices, vol. ED-17, pp. 128–134, 1970.
12. K. F. Knott, “Experimental location on the surface and bulk 1/f noise currents in low-noise, high-gain NPN planar transistors,” Solid-State Electron., vol. 16, pp. 1429–1434, 1973.
13. W. Kung, A. Nathan, A. Salim, and T. Manku, “Temperature dependence of low frequency noise and noise correlations in dual-collector lateral bipolar transistors,” in Int. Conf. on Noise in Physical Systems and 1/f Fluctuations (ICNF '91) (Kyoto, Japan, Nov. 24–27), 1991, pp. 217–222.
14. C. T. Green and B. K. Jones, in Int. Conf. on Noise in Physical Systems and 1/f Noise (Montpellier, France, May 17–20), 1983, pp. 267–269.
15. V. Zieren and B. P. Duyndam, “Magnetic-field-sensitive multicollector n-p-n transistors,” IEEE Trans. Electron Devices, vol. ED-29, pp. 83–90, 1982.
16. R. Meyer, L. Nagel, and S. Lui, “Computer simulation of 1/f noise performance of electronic circuits,” IEEE J. Solid-State Circuits, vol. SC-8, pp. 237–240, 1973.
17. W. Kung and A. Nathan, “A CAD model of low frequency noise behaviour in dual-collector bipolar transistors,” Microelectronics J., vol. 23, pp. 457–462, 1992.