DC and RF Performance of LP-MOCVD Grown Al0.25Ga0.75As/InxGa1-xAs (x =0.15-0.28) P-HEMT‘s with Si-Delta Doped GaAs Layer

IEEE Electron Device Letters

Volumn 16, Issue 12, 1995, Pages 563-565

  Jeon, Young Jin ^a   Jeong, Yoon Ha ^a   Kim, Bumman ^a   Kim, Young Gi ^b   Hong, Won Pyo ^b   Lee, Myung Sung ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b KT Cooperation   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRON TRANSPORT PROPERTIES; FREQUENCIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERFORMANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

CONDUCTION BAND DISCONTINUITY; ELECTRON GAS DENSITY; ELECTRON MOBILITY; S-PARAMETER MEASUREMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029547659     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.475588     Document Type: Article

References (15)

1. M. Sawada, D. Daijiro, K. Matsumura, and Y. Harada, “A new two-mode FET (TMT) for super low-noise and high-power applicationsIEEE Electron Device Lett. 14, no. 7, pp. 354–356, 1993
2. K. L. Tan, R. M. Dai, D. C. Streit, L. K. Shaw, A. C. Han, M. D. Sholley, P. H. Liu, T. Q. Trinh, T. Lin, and H. C. Yen, “60 GHz pseudomorphic Al 0.25 Ga 0.75 As/In 0.28 Ga 0.72 As low-noise HEMT’sIEEE Electron Device Lett. 12, no. l, pp. 23–25, 1991
3. D. H. Jeong, K. S. Jang, Y. H. Jeong, and B. M. Kim “DC and ac characteristics of Al 0.25 Ga 0.75 AsGaAs quantum-well delta-doped channel FET grown by LP-MOCVDIEEE Electron Device Lett. 13, no. 5, pp. 270–272, 1992
4. I. C. Kizilyalli, M. Artaki, and A. Chandra, “Monte carlo study of GaAs/Al x Ga l-x As MODFET’s: Effects of Al x Ga l-x As composition IEEE Trans. Electron Devices 38, no. 2, pp. 197: -206, 1991
5. F. Agahi, J. X. Yang, K. M. Lau, and K. S. Yagvesson, “High-quality two-dimensional electron gas in Al x Ga l-x As/GaAs heterostructures by LP-OMVPEIEEE Trans. Electron Devices 40, no. 3, pp. 502–503, 1993
6. C. L. Wu, W. C. Hsu, H. M. Shieh, and M. S. Tsai, “An improved inverted 6-doped GaAs/InGaAs pseudomorphic heterostructure grown by MOCVDIEEE Electron Device Lett. 15, no. 9, pp. 330–332, 1994
7. T. Baba, T. Mizutani, M. Ogawa and K. Ohata, “High-performance (AIAs/n-GaAs superlattice)/GaAs 2DEGFET's with stabilized threshold voltageJpn. J. Appl. Phys. 23, no. 8, pp. L654-L656, 1984
8. Y. H. Jeong, D. H. Jeong, W. P. Hong, C. Caneau, R. Bhat, and J. R. Hayes, “AlInAs/InP delta-doped channel field effect transistor grown by organometalic chemical vapor depositionJpn. J. Appl. Phys. 31, no. 2A, pp. L66-L67, 1992
9. H. M. Shieh, W. C. Hsu, R. T. Hsu, C. L. Wu. and T. S. Wu, “A highperformance 6-doped GaAs/In x Ga l-x As pseudomorphic high-electron mobility transistor.utilizing a graded In x Ga l- x As channel IEEE Electron Device Lett. no. 12, pp. 581-583, 1993
10. K. T. Hsu H. M. Shieh, W. C. HSU, and T. S, Wu Enhanced current driving capability GaAs/graded In x Ga 1-x As/GaAs high-electron mobility transistorSolid State Electron. 36, no. 8, pp. 1143-1146, 1993
11. C. L. Wu, W. C. Hsu, H. M. Shieh, and M. S. Tsai, “A noble δ-doped GaAs/InGaAs real-space transfer transistor with high peak-to-valley ratio and ‘high current driving capabilityIEEE. Electron Device Lett. 16, no. 3, pp. 112-114; 1995.
12. J. C. Huang, M. Zaitlin, W. Hoke M. Adlerstein, P. Lyman, P. Saledas, G. Jackson, E. Tong, and G. Flynn, “A high-gain, low-noise, 1/2-µm pulse-doped pseudomorphic HEMTIEEE Electron Device Lett. 10, no. 11, pp. 511–513, 1989
13. Y. J. Delorme, A. D. Lustrac, P. Crozat, K. Yazbek, R. Adde, G. Vernet, Y. Jin, B; Etienne, and H. Launois, “Electronic parameter evolutions against gatelength and bias in ultra short gate AlGaAs/GaAs HEMT’sElectron. Lett. 29; no. 7, pp. 642-643, 1993
14. H. Fawaz, J. Gest, M. Francois, H. E. Idrissi, and J. Zimmermann, “0.2 µm gate-l+ength pseudomorphic HIGFE'T using novel selfaligned TiPtAu/Wn T-gate technology for high-speed digital and millimeter wave applicationsElectron. Lett., vol, 29, no. 7, pp. 615-617,1993
15. K. B. Chough, W. P. Hon, L. Florez, and J. L Song, “Effect of strain on microwave noise characteristics in In 0.52 A1 0.48 As/In x Ga 1-x (0.53 <; x <; 0.80) HEMT’sElectron. Lett. 29, no. 15, pp. 1338–1340, 1993