DC and AC Characteristics of Al0.25Ga0.75As/GaAs Quantum-Well Delta-Doped Channel FET Grown by LP-MOCVD

IEEE Electron Device Letters

Volumn 13, Issue 5, 1992, Pages 270-272

  Jeong, Dong Ho ^a   Jang, Kyeong Sik ^a   Lee, Jeong Soo ^a   Jeong, Yoon Ha ^a   Kim, Bumman ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE MEASUREMENTS; SEMICONDUCTING GALLIUM ARSENIDE - CHEMICAL VAPOR DEPOSITION;

GALLIUM ARSENIDE BASED FET; LOW-PRESSURE METALORGANIC CVD; QUANTUM-WELL DELTA-DOPED CHANNEL FET; S-PARAMETER MEASUREMENT;

TRANSISTORS, FIELD EFFECT;

EID: 0026869830     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.145050     Document Type: Article

References (10)

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