GaAs hall sensors made by the MOCVD technique

Sensors and Actuators: A. Physical

Volumn 32, Issue 1-3, 1992, Pages 651-655

  Campesato, R ^a   Flores, C ^a   Passaseo, A ^b   Verni, S ^b  

^a CISE SpA   (Italy)

^b Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT TRANSDUCERS - CHARACTERIZATION; HALL EFFECT TRANSDUCERS - PERFORMANCE; MAGNETIC FIELD MEASUREMENT - SENSORS; SEMICONDUCTING GALLIUM ARSENIDE - CHARACTERIZATION; SEMICONDUCTING GALLIUM ARSENIDE - CHEMICAL VAPOR DEPOSITION;

GALLIUM ARSENIDE HALL SENSORS; METAL ORGANIC CHEMICAL VAPOR DEPOSITION;

HALL EFFECT TRANSDUCERS;

EID: 0026851578     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/0924-4247(92)80058-B     Document Type: Article

References (3)

1. Integrated semiconductor magnetic field sensors
2. GaAs Hall element fabricated by ion implantation
3. GaAs Hall devices produced by local ion implantation