Dependence of Hooge Parameter of Compound Semiconductors on Temperature

Japanese Journal of Applied Physics

Volumn 31, Issue 3B, 1992, Pages L316-L139

  Tacano, Munecazu ^a   Tanoue, Hisao ^a   Sugiyama, Yoshinobu ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

G f noise; Gaas; Geterostructure; Gib implantation; Gngaas; Gnp; Googe parameter

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - THERMAL EFFECTS; SEMICONDUCTING INDIUM PHOSPHIDE - THERMAL EFFECTS;

1/F NOISE; FOCUSED ION BEAM IMPLANTATION; HOOGE PARAMETER; INDIUM GALLIUM ARSENIDE HETEROSTRUCTURE;

SEMICONDUCTOR MATERIALS;

EID: 0026839491     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.31.L316     Document Type: Article

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