High-performance Hall sensors based on III-V heterostructures

Sensors and Actuators: A. Physical

Volumn 42, Issue 1-3, 1994, Pages 450-454

  Mosser, V ^a   Aboulhouda, S ^a   Denis, J ^a   Contreras, S ^b   Lorenzini, Ph ^b   Kobbi, F ^b   Robert, J L ^b  

^a SCHLUMBERGER   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 50749132621     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/0924-4247(94)80032-4     Document Type: Article

References (9)

1. Highly-sensitive Hall element with quantum well superlattice structure
2. Highly-sensitive 2DEG-Hall device made of pseudomorphic InGaAs heterostructure
3. Highly sensitive gated InGaAs/InP Hall sensors with low temperature coefficient of the sensitivity
4. Physics of AlGaAs/InGaAs/GaAs heterostructures for high performance magnetic sensors
5. High sensitivity Hall sensors with low thermal drift using AlGaAs/InGaAs/GaAs heterostructures
6. An improved GaAs MEFET equivalent circuit model for analog integrated circuit applications
7. Vertical Hall effect devices with suppressed junction field effects