A Theory of the Hooge Parameters of Solid-State Devices

IEEE Transactions on Electron Devices

Volumn 32, Issue 3, 1985, Pages 667-671

  Van Der Ziel, Aldert ^a   Duh, Kuang Hann ^a   Handel, P H ^b   Zhu, Xichen ^c  

^a UNIVERSITY OF MINNESOTA   (United States)

^b UNIVERSITY OF MISSOURI ST LOUIS   (United States)

^c KUNMING INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS - PROPAGATION; SOLID STATE DEVICES - THEORY; TRANSISTORS, BIPOLAR; TRANSISTORS, FIELD EFFECT;

HANDEL'S THEORY; HOLES; HOOGE PARAMETERS; MOBILITY 1/F NOISE;

SEMICONDUCTOR DEVICES;

EID: 0022025018     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.21996     Document Type: Article

References (25)

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