Highly Sensitive In0.53Ga0.47As/InP Hall Sensors Grown by MOVPE

IEEE Transactions on Electron Devices

Volumn 41, Issue 3, 1994, Pages 315-320

  Popovic, Radoivje S ^b   Schmid, Jürg ^a   Melchior, Hans ^a  

^a ETH ZURICH   (Switzerland)

^b Landis and Gyr Communications Corp   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

JUNCTION BREAKDOWN; LINEARITY ERRORS; METALORGANIC VAPOR PHASE EPITAXY;

ELECTRON DEVICE MANUFACTURE; EPITAXIAL GROWTH; HALL EFFECT; HALL EFFECT DEVICES; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SENSITIVITY ANALYSIS; SENSORS; SIGNAL NOISE MEASUREMENT; SOLID STATE DEVICE STRUCTURES;

SOLID STATE DEVICES;

EID: 0028392997     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.275215     Document Type: Article

References (17)

1. H. P. Baltes and R. S. Popovic, “Integrated semiconductor magnetic field sensors,” Proc. IEEE, vol. 74, pp. 1107-1132, Aug. 1986.
2. R. S. Popovic, “Hall effect devices,” in Adam Hilger Series on Sensors. Bristol, UK: Adam Hilger, 1991.
3. Y. Sugiyama, T. Taguchi, and M. Tacano, “Highly-sensitive magnetic sensor made of AlGaAs/GaAs heterojunction semiconductors,” Proc. 6th Sensor Symp., pp. 55-60, 1986.
4. Y. Sugiyama, H. Soga, and M. Tacano, “Highly-sensitive Hall element with quantum-well superlattice structures,” J. Cryst. Growth, vol. 95, pp. 394-397, 1989.
5. Y. Sugiyama, Y. Takeuchi, and M. Tacano, “Highly-sensitive Hall device made of pseudomorphic InAlAs/InGaAs heterostructure,” Sensors and Actuators A, vol. 34, pp. 131-136, 1992.
6. Y. Sugiyama, “Temperature dependence of InGaAs-2DEG Hall devices,” Proc. 11th Sensor Symp., pp. 79-82, 1992.
7. D. Schmitz, “Low-pressure MOVPE of InP-based compound semiconductors,” in InP and Related Materials: Processing, Technology, and Devices, A. Katz, Ed. Boston: Artech House, 1992, pp. 103-150.
8. P. Daniil and E. Cohen, “Low field Hall effect magnetometry,” J. Appl. Phys., vol. 53, no. 11, pp. 8257-8259, Nov. 1982.
9. R. S. Popovic and B. Haelg, “Non-linearity in Hall devices and its compensation,” Solid-State Electron., vol. 31, pp. 681-688, 1988.
10. J. Haeusler and H. J. Lippmann, “Hallgeneratoren mit kleinem Linearisierungsfehler,” Solid-State Electronics, vol. 11, pp. 173-182, 1968
11. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
12. Y. Takeda and M. A. Littlejohn, “Electron concentration dependence of Hall factor in InGaAs,” Appl. Phys. Lett., vol. 40, no. 3, pp. 251-253, Feb. 1982.
13. D. A. Anderson and N. Apsley, “The Hall effect in III-V semiconductor assessment,” Semicond. Sci. Technol., vol. 1, pp. 187-202, 1986.
14. T. Hara, M. Mihara, N. Toyoda, and M. Zama, “Highly linear GaAs Hall devices fabricated by ion implantation,” IEEE Trans. Electron Devices, vol. ED-29, pp. 78-82, Jan. 1982.
15. F. N. Hooge, “1/f noise is no surface effect,” Phys. Lett., vol. A-29, pp. 139-140, 1969.
16. A. Van der Ziel, P. H. Handel, X. Zhu and K. H. Duh, “A theory of the Hooge parameter of solid-state devices,” IEEE Trans. Electron Devices, vol. ED-32, pp. 667-671, March 1985.
17. A. Chovet and N. Mathieu, “Noise and resolution of semiconductor integrated magnetic sensors,” Sensors and Actuators A, vol. 32, pp. 682-687, 1992.