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Volumn 5, Issue 5, 1995, Pages 150-152

A 140-GHz Monolithic Low Noise Amplifier

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; HYBRID INTEGRATED CIRCUITS; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PERFORMANCE; RADIOMETERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0029305661     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.374081     Document Type: Article
Times cited : (25)

References (11)
  • 1
    • 0026152278 scopus 로고
    • A super low-noise 0.1 µm T-gate InAlAs-InGaAs-InP HEMT
    • May
    • K. H. G. Duh et al., “A super low-noise 0.1 µm T-gate InAlAs-InGaAs-InP HEMT,” IEEE Microwave and Guided Wave Lett., vol. 1, no. 5., pp. 114-116, May 1991.
    • (1991) IEEE Microwave and Guided Wave Lett. , vol.1 , Issue.5 , pp. 114-116
    • Duh, K. H. G.1
  • 2
    • 84936895748 scopus 로고
    • 140 GHz 0.1 µm gate-length pseudomorphic Ino.52Alo.48As/Ino.6oGao.4oAs/InP HEMT
    • Washington D.C.,Dec.
    • K. L. Tan et al., “140 GHz 0.1 µm gate-length pseudomorphic Ino.52Alo.48As/Ino.6oGao.4oAs/InP HEMT,” in IEEE Int. Electron. Device Meeting Dig., Washington D.C., pp. 239-242, Dec. 1991.
    • (1991) IEEE Int. Electron. Device Meeting Dig. , pp. 239-242
    • Tan, K.L.1
  • 3
    • 0025588053 scopus 로고
    • 94 GHz 0.1 µm T-gate low noise pseudomorphic InGaAs HEMT’s
    • K. L. Tan et al., “94 GHz 0.1 µm T-gate low noise pseudomorphic InGaAs HEMT’s,” IEEE Electron Dev. Lett., vol. 11, no. 12., Dec, 1990, pp. 585-587.
    • (1990) IEEE Electron Dev. Lett. , vol.11 , Issue.12 , pp. 585-587
    • Tan, K.L.1
  • 6
    • 0027308438 scopus 로고
    • Millimeter-wave cryogenically-coolable amplifiers using AlInAs/GalnAs/InP HEMT’s
    • Atalanta, GA,June
    • M. W. Pospieszalski et al., “Millimeter-wave cryogenically-coolable amplifiers using AlInAs/GalnAs/InP HEMT’s,” in 1993 IEEE MTT-S Int. Microwave Symp. Dig., vol. 2, pp. 515-518, Atalanta, GA, June 1993.
    • (1993) 1993 IEEE MTT-S Int. Microwave Symp. Dig. , vol.2 , pp. 515-518
    • Pospieszalski, M.W.1
  • 10
    • 0027678732 scopus 로고
    • A monolithic 75-110 GHz balanced InP-based HEMT amplifier
    • Oct.
    • H. Wang, R. Lai, S. Chen, and J. Berenz, “A monolithic 75-110 GHz balanced InP-based HEMT amplifier,” IEEE Microwave and Guided Wave Lett., vol. 3, no. 10, pp. 381-383, Oct. 1993.
    • (1993) IEEE Microwave and Guided Wave Lett. , vol.3 , Issue.10 , pp. 381-383
    • Wang, H.1    Lai, R.2    Chen, S.3    Berenz, J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.