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1
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0026152278
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A super low-noise 0.1 µm T-gate InAlAs-InGaAs-InP HEMT
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Duh, K. H. G.1
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140 GHz 0.1 µm gate-length pseudomorphic Ino.52Alo.48As/Ino.6oGao.4oAs/InP HEMT
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Washington D.C.,Dec.
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K. L. Tan et al., “140 GHz 0.1 µm gate-length pseudomorphic Ino.52Alo.48As/Ino.6oGao.4oAs/InP HEMT,” in IEEE Int. Electron. Device Meeting Dig., Washington D.C., pp. 239-242, Dec. 1991.
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(1991)
IEEE Int. Electron. Device Meeting Dig.
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Tan, K.L.1
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3
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0025588053
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94 GHz 0.1 µm T-gate low noise pseudomorphic InGaAs HEMT’s
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K. L. Tan et al., “94 GHz 0.1 µm T-gate low noise pseudomorphic InGaAs HEMT’s,” IEEE Electron Dev. Lett., vol. 11, no. 12., Dec, 1990, pp. 585-587.
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Tan, K.L.1
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110-120 GHz monolithic low noise amplifiers
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Oct.
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H. Wang, T. N. Ton, K. L. Tan, D. Garske, G. S. Dow, J. Berenz, M. W. Pospieszalski, and S. K. Pan, “110-120 GHz monolithic low noise amplifiers,” IEEE J. Solid-State Circuits, vol. 28, no. 10, pp. 988-993, Oct. 1993.
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Wang, H.1
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Pan, S.K.8
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5
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0028442816
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A monolithically integrated 120 GHz InGaAs/InAlAs/InP HEMT amplifier
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June
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R. Lai, H. Wang, K. L. Tan, G. I. Ng, D. C. Streit, P. H. Liu, J. Velebir Jr., S. Chen, J. Berenz, and M. W. Pospieszalski, “A monolithically integrated 120 GHz InGaAs/InAlAs/InP HEMT amplifier,” IEEE Microwave and Guided Wave Lett., vol. 4, no. 6, pp. 194-195, June 1994.
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Pospieszalski, M.W.10
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6
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0027308438
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Millimeter-wave cryogenically-coolable amplifiers using AlInAs/GalnAs/InP HEMT’s
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Atalanta, GA,June
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M. W. Pospieszalski et al., “Millimeter-wave cryogenically-coolable amplifiers using AlInAs/GalnAs/InP HEMT’s,” in 1993 IEEE MTT-S Int. Microwave Symp. Dig., vol. 2, pp. 515-518, Atalanta, GA, June 1993.
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Pospieszalski, M.W.1
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0027663367
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A high performance monolithic Q-band InP-based HEMT low noise amplifier
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Sept.
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D. C. W. Lo, R. Lai, H. Wang, K. L. Tan, R. Dia, D. Streit, P. Liu, J. Velebir, B. Allen, and J. Berenz, “A high performance monolithic Q-band InP-based HEMT low noise amplifier,” IEEE Microwave and Guided Wave Lett., vol. 3, no. 9., Sept. 1993.
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Berenz, J.10
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8
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84944998568
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A V-band monolithic InP HEMT downconverier
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San Jose, CA,Oct.
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K. W. Chang, H. Wang, R. Lai, D. C. W. Lo, and J. Berenz, “A V-band monolithic InP HEMT downconverier,” in 15th Annual IEEE GaAs IC Symp. Dig., San Jose, CA, Oct. 1993.
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15th Annual IEEE GaAs IC Symp. Dig.
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Chang, K.W.1
Wang, H.2
Lai, R.3
Lo, D.C.W.4
Berenz, J.5
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9
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0027816549
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Low noise and high gain 94 GHz monolithic InP-based HEMT amplifiers
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Washington D.C.,Dec.
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H. Wang, T. N. Ton, R. Lai, D. C. W. Lo, S. Chen, D. Streit, G. S. Dow, K. L. Tan, and J. Berenz, “Low noise and high gain 94 GHz monolithic InP-based HEMT amplifiers,” in IEEE Int. Electron. Device Meeting Tech. Dig., pp. 239-242, Washington D.C., Dec. 1993.
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IEEE Int. Electron. Device Meeting Tech. Dig.
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Wang, H.1
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Tan, K.L.8
Berenz, J.9
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10
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0027678732
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A monolithic 75-110 GHz balanced InP-based HEMT amplifier
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Oct.
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H. Wang, R. Lai, S. Chen, and J. Berenz, “A monolithic 75-110 GHz balanced InP-based HEMT amplifier,” IEEE Microwave and Guided Wave Lett., vol. 3, no. 10, pp. 381-383, Oct. 1993.
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High performance W-band monolithic InGaAs pseudomorphic HEMT LNA’s and design/analysis methodology
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Mar.
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H. Wang, G. S. Dow, B. Allen, T. N. Ton, K. Tan, K. W. Chang, T. H. Chen, J. Berenz, T. S. Lin, P. Liu, D. Streit, S. Bui, J. J. Raggio, and P. D. Chow, “High performance W-band monolithic InGaAs pseudomorphic HEMT LNA’s and design/analysis methodology,” IEEE Trans. Microwave Theory Tech., vol. 40, no. 3, pp. 417-428, Mar. 1992.
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Wang, H.1
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Chen, T.H.7
Berenz, J.8
Lin, T.S.9
Liu, P.10
Streit, D.11
Bui, S.12
Raggio, J.J.13
Chow, P.D.14
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