High gain monolithic p-HEMT W-band four-stage low noise amplifiers

Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium

Volumn , Issue , 1994, Pages 29-32

  Tu, D W ^a   Berk, W P ^a   Brown, S E ^a   Byer, N E ^a   Duncan, S W ^a   Eskandarian, A ^a   Fischer, E ^a   Gill, D M ^a   Golja, B ^a   Kane, B C ^a   Svensson, S P ^a   Weinreb, S ^a  

^a LOCKHEED MARTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; GAIN CONTROL; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MICROPROCESSOR CHIPS; MONOLITHIC INTEGRATED CIRCUITS; PHOTORESISTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL TO NOISE RATIO; WAVEGUIDE COUPLERS; WAVEGUIDES;

COPLANAR WAVEGUIDE CIRCUIT ELEMENTS; DC BONDING PADS; INTEGRAL WAVEGUIDE COUPLING PROBES; MONOLITHIC W BAND FOUR STAGE LOW NOISE AMPLIFIERS; NOISE FIGURE; SINGLE POLARITY BIAS REQUIREMENT;

MICROWAVE AMPLIFIERS;

EID: 0027987701     PISSN: 00748587     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)