Low Noise and High Gain 94 GHz Monolithic InP-Based HEMT Amplifiers

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 239-242

  Wang, H ^b   Ton, T N ^a   Lai, R ^a   Lo, D C W ^a   Chen, S ^a   Streit, D ^a   Dow, G S ^a   Tan, K L ^a   Berenz, J ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POWER UTILIZATION; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; SEMICONDUCTING INDIUM PHOSPHIDE; FIELD EFFECT TRANSISTORS; GAIN MEASUREMENT; GATES (TRANSISTOR); INDIUM COMPOUNDS;

DC POWER CONSUMPTION; HIGH GAIN; INALAS/INGAAS/INP; LOW-HIGH; LOWER NOISE; MONOLITHIC AMPLIFIERS; MONOLITHICS; NOISE GAIN; SMALL SIGNAL GAIN; W BANDS;

NOISE FIGURE; AMPLIFIERS (ELECTRONIC);

MONOLITHIC AMPLIFIERS; NOISE FIGURE; PSEUDOMORPHIC TECHNOLOGY;

EID: 0027816549     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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