A Monolithically Integrated 120-GHz InGaAs/InAlAs/InP HEMT Amplifier

IEEE Microwave and Guided Wave Letters

Volumn 4, Issue 6, 1994, Pages 194-195

  Lai, R ^a   Wang, H ^a   Tan, K L ^a   Streit, D C ^a   Liu, P H ^a   Velebir, J ^a   Chen, S ^a   Berenz, J ^a   Pospieszalski, M W ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b NATIONAL RADIO ASTRONOMY OBSERVATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CASCADE CONNECTIONS; ELECTRIC NETWORK PARAMETERS; GAIN MEASUREMENT; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC INTEGRATED CIRCUITS; PRODUCT DESIGN; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

GAIN PERFORMANCE; HIGH ELECTRON MOBILITY TRANSISTOR AMPLIFIER; INDIUM ALUMINUM ARSENIDE; INDIUM GALLIUM ARSENIDE; MONOLITHICALLY INTEGRATED AMPLIFIERS;

POWER AMPLIFIERS;

EID: 0028442816     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.294290     Document Type: Article

References (9)

1. K. Tan et al., “140 GHz 0.1 pm Gate Length Pseudomorphic InAlAs/InGaAs/InP HEMT,” in Proc. 1991 IEDM, 1991, Washington DC, p. 239.
2. P. D. Chow et al., “W-band and D-band Low Noise Amplifiers Using 0.1 μm Pseudomorphic InAlAs/InGaAs/InP HEMTs,” in Proc. 1992 Int. Microwave Symp., 1992, Albuquerque, NM, p. 807.
3. L. D. Nguyen et al., “50 nm Self-Aligned Gate Pseudomorphic AlInAs/GalnAs High Electron Mobility Transistors,” IEEE Trans. Electron Devices, vol. 39, p. 2007, 1992.
4. K. H. Duh et al., “A Super Low-Noise 0.1 pm T-gate InAlAs/InGaAs/InP HEMT,” IEEE Microwave and Guided Wave Lett., vol. 1, p. 114, 1991.
5. R. Lai et al., “A High Performance and Low DC Power V-band MMIC LNA Using 0.1 pm InGaAs/InAlAs/InP HEMT Technology,” IEEE Microwave and Guided Wave Lett., vol. 3, p. 447, Dec. 1993.
6. H. Wang et al., “A Monolithic 75–110 GHz Balanced InP-based HEMT Amplifier,” IEEE Microwave and Guided Wave Lett., vol. 3, 1993, p. 381.
7. H. Wang et al., “A High performance W-band monolithic InGaAs pseudomorphic HEMT LNAs and design/analysis methodology,” IEEE J. Solid State Circuits, vol. 28, 988, 1993.
8. H. Wang et al., “High performance W-band monolithic InGaAs pseudomorphic HEMT LNAs and design/analysis methodology,” IEEE Trans. Microwave Theory Tech., vol. 40, p. 417, 1992.
9. S. Chen et al., “A W-band automated on-wafer probing noise figure measurement system,” in 41st Automated RF Tech. Group Conf. Dig., June 1993, Atlanta, GA, p. 48.