Evaluation of a copper metallization process and the electrical characteristics of copper-interconnected quarter-micron CMOS

IEEE Transactions on Electron Devices

Volumn 43, Issue 8, 1996, Pages 1206-1212

  Awaya, Nobuyoshi ^a   Inokawa, Hiroshi ^a   Yamamoto, Eiichi ^a   Okazaki, Yukio ^a   Miyake, Masayasu ^a   Arita, Yoshinobu ^a   Kobayashi, Toshio ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOROPHOSPHATE GLASS; BOROSILICATE GLASS; CHEMICAL POLISHING; CHEMICAL VAPOR DEPOSITION; CLEANING; CMOS INTEGRATED CIRCUITS; ELECTRIC PROPERTIES; ELECTRIC WIRING; LEAKAGE CURRENTS; MOS DEVICES; SEMICONDUCTOR JUNCTIONS; TITANIUM NITRIDE;

BORONPHOSPHOSILICATE GLASS; CAPACITANCE VOLTAGE CHARACTERISTICS; CHEMICAL MECHANICAL POLISHING; COPPER CHEMICAL VAPOR DEPOSITION; COPPER METALLIZATION PROCESS; TIME DEPENDENT DIELECTRIC BREAKDOWN CHARACTERISTICS;

COPPER;

EID: 0030215451     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.506770     Document Type: Article

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