Characteristics of a New Isolated p-Well Structure Using Thin Epitaxy Over the Buried Layer and Isolation Trench

IEEE Transactions on Electron Devices

Volumn 39, Issue 12, 1992, Pages 2758-2764

  Okazaki, Yukio ^a   Kobayashi, Toshio ^a   Konaka, Shinsuke ^a   Morimoto, Takashi ^a   Takahashi, Mitsutoshi ^a   Imai, Kazuo ^a   Kado, Yuichi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; THIN FILM CIRCUITS;

BICMOS; LATCHUP IMMUNITY; P-WELL STRUCTURE; TRENCH ISOLATION; VOLTAGE TOLERANCE;

LSI CIRCUITS;

EID: 0026979128     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.168730     Document Type: Article

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