Acute: a high performance analog complementary polysilicon emitter bipolar technology utilizing SOI/trench full dielectric isolation

IEEE International SOI Conference

Volumn , Issue , 1993, Pages 100-101

  Jerome, R C ^a   Post, I R C ^a   Travnicek, P G ^a   Wodek, G M ^a   Huffstater, K E ^a   Williams, D R ^a  

^a United Technologies Kidde   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CAPACITANCE; COMPUTER SIMULATION; GAIN CONTROL; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL EFFECTS; THICKNESS CONTROL;

ADVANCED COMPLEMENTARY FROM UNITED TECHNOLOGIES; BIPOLAR PROCESS TECHNOLOGY; DIELECTRIC ISOLATION; POLYSILICON; SECONDARY ION MASS SPECTROSCOPY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0027813739     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)