The effects of scaling and rapid thermal annealing on the 1/∫ noise of polysilicon emitter bipolar transistors

Microelectronic Engineering

Volumn 15, Issue 1-4, 1991, Pages 533-536

  Siabi Shahrivar, N ^a   Kemhadjian, H A ^a   Redman White, W ^a   Ashburn, P ^a   Williams, J D ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

NOISE ABATEMENT - APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS - APPLICATIONS; TRANSISTORS, BIPOLAR - EVALUATION;

POLYSILICON EMITTER BIPOLAR TRANSISTOR TECHNOLOGY; RAPID THERMAL ANNEALING;

SEMICONDUCTOR DEVICES, BIPOLAR;

EID: 0026237922     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(91)90278-L     Document Type: Article

References (8)

1. Self-aligned transistors with polysilicon emitters for bipolar VLSI
2. Comparison of experimental and theoretical results on polysilicon emitter bipolar transistors
3. Low-frequency noise in self-aligned bipolar transistors
4. Origin of 1/f noise in bipolar transistors