Fundamental 1/ƒ noise in silicon bipolar transistors

Solid State Electronics

Volumn 31, Issue 5, 1988, Pages 831-834

  Pawlikiewicz, A H ^a   van der Ziel, A ^b   Kousik, G S ^c   Van Vliet, C M ^d  

^a Energy Conversion Devices Inc   (United States)

^b UNIVERSITY OF MINNESOTA   (United States)

^c LOUISIANA STATE UNIVERSITY   (United States)

^d UNIVERSITÉ DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

NOISE, SPURIOUS SIGNAL - ANALYSIS; SEMICONDUCTING SILICON;

1/F NOISE; ACOUSTIC PHONON SCATTERING; FORWARD BIASED BASE; SILICON BIPOLAR TRANSISTORS; UMKLAPP OR INTERVALLEY SCATTERING;

TRANSISTORS, BIPOLAR;

EID: 0024012169     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(88)90035-4     Document Type: Article

References (16)

1. +-n-p silicon bipolar transistors
2. A theory of the Hooge parameters of solid-state devices
3. Location of 1/f noise sources in BJT's and HBJT's—I. theory
4. Location of 1/f noise sources in BJT's—II. Experiment
5. Quantum 1/fnoise associated with ionized impurity scattering and electron-phonon scattering in condensed matter