메뉴 건너뛰기




Volumn 41, Issue 11, 1994, Pages 1981-1991

Low-Frequency Noise in Modern Bipolar Transistors: Impact of Intrinsic Transistor and Parasitic Series Resistances

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC RESISTANCE; HETEROJUNCTIONS; MATHEMATICAL MODELS; RESISTORS; SIGNAL NOISE MEASUREMENT; SIGNAL TO NOISE RATIO; SPURIOUS SIGNAL NOISE;

EID: 0028549703     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.333815     Document Type: Article
Times cited : (57)

References (29)
  • 2
    • 0008595204 scopus 로고
    • New HBT cuts 1/f noise significantly
    • NEC Corp., Tokyo, Japan, no. 126, Apr.
    • “New HBT cuts 1/f noise significantly,” NEC NEWS, NEC Corp., Tokyo, Japan, no. 126, Apr. 1991, p. 3.
    • (1991) NEC NEWS , Issue.126 , pp. 3
  • 3
    • 0023980926 scopus 로고
    • Unified presentation of 1/f noise in electronic devices: Fundamental 1/f noise sources
    • A. van der Ziel, “Unified presentation of 1/f noise in electronic devices: Fundamental 1/f noise sources,” Proc. IEEE, vol. 76, pp. 233-258, 1988.
    • (1988) Proc. IEEE , vol.76 , pp. 233-258
    • van der Ziel, A.1
  • 4
    • 36248974270 scopus 로고
    • 1/f noise in electron devices
    • A. Ambrozy, Ed. Budapest, Hungary: Akademiai Kiado
    • T. G. M. Kleinpenning, “1/f noise in electron devices,” in Noise in Physical Systems, A. Ambrozy, Ed. Budapest, Hungary: Akademiai Kiado, 1990, pp. 443-454.
    • (1990) Noise in Physical Systems , pp. 443-454
    • Kleinpenning, T.G.M.1
  • 6
    • 0000043813 scopus 로고
    • Location of low-frequency noise sources in submicrometer bipolar transistors
    • T. G. M. Kleinpenning, “Location of low-frequency noise sources in submicrometer bipolar transistors,” IEEE Trans. Electron Devices, vol. 39, pp. 1501-1506, 1992.
    • (1992) IEEE Trans. Electron Devices , vol.39 , pp. 1501-1506
    • Kleinpenning, T.G.M.1
  • 7
    • 0027608465 scopus 로고
    • 1/f noise in n-p-n GaAs/AlGaAs heterojunction bipolar transistors: impact of intrinsic transistor and parasitic series resistances
    • T. G. M. Kleinpenning and A. J. Holden, “1/f noise in n-p-n GaAs/AlGaAs heterojunction bipolar transistors: impact of intrinsic transistor and parasitic series resistances,” IEEE Trans. Electron Devices, vol. 40, pp. 1148-1153, 1993.
    • (1993) IEEE Trans. Electron Devices , vol.40 , pp. 1148-1153
    • Kleinpenning, T.G.M.1    Holden, A.J.2
  • 8
    • 0041536311 scopus 로고
    • On the analysis of low-frequency noise in bipolar transistors
    • P. H. Handel and A. L. Chung, Eds., AIP Conf. Proc. 285, New York: American Institute of Physics
    • T. G. M. Kleinpenning, “On the analysis of low-frequency noise in bipolar transistors,” in Noise in Physical Systems and 1/f Fluctuations, P. H. Handel and A. L. Chung, Eds., AIP Conf. Proc. 285, New York: American Institute of Physics, 1993, pp. 187-193.
    • (1993) Noise in Physical Systems and 1/f Fluctuations , pp. 187-193
    • Kleinpenning, T.G.M.1
  • 9
    • 0018989259 scopus 로고
    • 1/f noise in p-n diodes
    • T. G. M. Kleinpenning, “1/f noise in p-n diodes,” Physica, vol. 98B, pp. 289-299, 1980.
    • (1980) Physica , vol.98B , pp. 289-299
    • Kleinpenning, T.G.M.1
  • 10
    • 0022129425 scopus 로고
    • On 1/f noise in recombination currents in p-n junctions
    • T. G. M. Kleinpenning, “On 1/f noise in recombination currents in p-n junctions,” Physica, vol. 132B, pp. 364-366, 1985.
    • (1985) Physica , vol.132B , pp. 364-366
    • Kleinpenning, T.G.M.1
  • 11
    • 0023341047 scopus 로고
    • Charge-control model applied to 1/f noise in long p+-n diodes
    • T. G. M. Kleinpenning, “Charge-control model applied to 1/f noise in long p+-n diodes,” Physica, vol. 145B, pp. 190-194, 1987.
    • (1987) Physica , vol.145B , pp. 190-194
    • Kleinpenning, T.G.M.1
  • 12
    • 0024129213 scopus 로고
    • 1/f mobility fluctuaions in p-i-n and p-v-n diodes
    • T. G. M. Kleinpenning, 1/f mobility fluctuaions in p-i-n and p-v-n diodes,” Physica, vol. 154B, pp. 27-34, 1988.
    • (1988) Physica , vol.154 B , pp. 27-34
    • Kleinpenning, T.G.M.1
  • 14
    • 0026938337 scopus 로고
    • Low-frequency noise properties of N-p-n AlGaAs/GaAs heterojunction bipolar transistors
    • D. Costa and J. S. Harris, “Low-frequency noise properties of N-p-n AlGaAs/GaAs heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 39, pp. 2383-2394, 1992.
    • (1992) IEEE Trans. Electron Devices , vol.39 , pp. 2383-2394
    • Costa, D.1    Harris, J.S.2
  • 17
    • 0009015232 scopus 로고
    • Low-frequency excess noise and RTS noise in submicron bipolar transistors
    • T. Musha, S. Sato and M. Yamamoto, Eds. Kyoto, Japan: Ohmasha, Ltd.
    • T. G. M. Kleinpenning and A. J. Holden, “Low-frequency excess noise and RTS noise in submicron bipolar transistors,” in Noise in Physical Systems and I/f fluctuations, T. Musha, S. Sato and M. Yamamoto, Eds. Kyoto, Japan: Ohmasha, Ltd., 1991, pp. 435-438.
    • (1991) Noise in Physical Systems and I/f fluctuations , pp. 435-438
    • Kleinpenning, T.G.M.1    Holden, A.J.2
  • 18
    • 36549102226 scopus 로고
    • Low-frequency noise in self-aligned bipolar transistors
    • Pong-Fei Lu, “Low-frequency noise in self-aligned bipolar transistors,” J. App. Phys., vol. 62, pp. 1335-1339, 1987.
    • (1987) J. App. Phys. , vol.62 , pp. 1335-1339
    • Lu, P.-F.1
  • 19
    • 0005250916 scopus 로고
    • On 1/f noise and random telegraph noise in very small electron devices
    • T. G. M. Kleinpenning, “On 1/f noise and random telegraph noise in very small electron devices,” Physica, vol. B 164, pp. 331-334, 1990.
    • (1990) Physica , vol.B164 , pp. 331-334
    • Kleinpenning, T.G.M.1
  • 20
    • 0022698725 scopus 로고
    • On 1/f mobility fluctuations in bipolar transistors
    • T. G. M. Kleinpenning, “On 1/f mobility fluctuations in bipolar transistors,” vol. 138B, pp. 244-252, 1986.
    • (1986) , vol.138B , pp. 244-252
    • Kleinpenning, T.G.M.1
  • 21
    • 84907803141 scopus 로고
    • The Effects of Scaling and Rapid Thermal Annealing on the 1/f Noise of Polysilicon Emitter Bipolar Transistors
    • N. Siabi-Shahrivar, H. A. Kemhadjian, W. Redman-White, P. Ashbum, and J. D. Williams, “The Effects of Scaling and Rapid Thermal Annealing on the 1/f Noise of Polysilicon Emitter Bipolar Transistors,” Microelectronic Engineering, vol. 15, pp. 533-536, 1991.
    • (1991) Microelectronic Engineering , vol.15 , pp. 533-536
    • Siabi-Shahrivar, N.1    Kemhadjian, H.A.2    Redman-White, W.3    Ashbum, P.4    Williams, J.D.5
  • 22
    • 0040138347 scopus 로고
    • Low-frequency noise sources in polysilicon emitter bipolar transistors: influence of hot-electron-induced degradation
    • P. H. Handel and A. L. Chung, Eds. AIP Conf. Proc. 285, New York: American Institute of Physics
    • A. Mounib, F. Balestra, N. Mathieu, J. Brini, G. Ghibaudo, and A. Chovet, “Low-frequency noise sources in polysilicon emitter bipolar transistors: influence of hot-electron-induced degradation,” in Noise in Physical Systems and 1/f Fluctuations, P. H. Handel and A. L. Chung, Eds. AIP Conf. Proc. 285, New York: American Institute of Physics, 1993, pp. 288-291.
    • (1993) Noise in Physical Systems and 1/f Fluctuations , pp. 288-291
    • Mounib, A.1    Balestra, F.2    Mathieu, N.3    Brini, J.4    Ghibaudo, G.5    Chovet, A.6
  • 23
    • 0001133507 scopus 로고
    • An assessment of noise sources and characteristics of AIGaAs/GaAs HBT’s
    • IOP Publ. Ltd.
    • M. N. Tutt, D. Pavlidis, and B. Bayraktaroglu, “An assessment of noise sources and characteristics of AIGaAs/GaAs HBT’s,” Inst. Phys. Conf. Ser., no. 106, IOP Publ. Ltd., 1990, pp. 701-706.
    • (1990) Inst. Phys. Conf. Ser. , Issue.106 , pp. 701-706
    • Tutt, M.N.1    Pavlidis, D.2    Bayraktaroglu, B.3
  • 24
    • 0026392831 scopus 로고
    • 1/f noise in AIGaAs/GaAs HBT’s using ultrasensitive characterization techniques for identifying noise mechanisms
    • IOP Publ. Ltd.
    • M. N. Tutt, D. Pavlidis, D. Pehlke, R. Plana, and J. Graffeuil, “1/f noise in AIGaAs/GaAs HBT’s using ultrasensitive characterization techniques for identifying noise mechanisms,” Inst. Phys. Conf. Ser., no. 120, IOP Publ. Ltd., 1992, pp. 317-322.
    • (1992) Inst. Phys. Conf. Ser. , Issue.120 , pp. 317-322
    • Tutt, M.N.1    Pavlidis, D.2    Pehlke, D.3    Plana, R.4    Graffeuil, J.5
  • 25
    • 0024681609 scopus 로고
    • Transport and noise in GaAs/AlGaAs HBT’s-Part II: Noise and gain at low frequencies
    • S. C. Jue, D. J. Day, A. Margittai, and M. Svilans, “Transport and noise in GaAs/AlGaAs HBT’s-Part II: Noise and gain at low frequencies,” IEEE Trans. Electron Devices, vol. 36, pp. 1020-1025, 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 1020-1025
    • Jue, S.C.1    Day, D.J.2    Margittai, A.3    Svilans, M.4
  • 26
    • 0024131797 scopus 로고
    • A low-noise A’u-band AIGaAs/GaAs HBT oscillator
    • IEEE Cat. no. 88CH2489-3.
    • N. Hayama, S. R. Le Sage, M. Madihian, and K. Honjo, “A low-noise A’u-band AIGaAs/GaAs HBT oscillator,” in IEEE MTT Int. Microwave Symp. Dig., vol. II, 1988, pp. 679-682, IEEE Cat. no. 88CH2489-3.
    • (1988) IEEE MTT Int. Microwave Symp. Dig. , vol.II , pp. 679-682
    • Hayama, N.1    Le Sage, S.R.2    Madihian, M.3    Honjo, K.4
  • 29
    • 0027906035 scopus 로고
    • Experimental studies of 1/f noise in n-GaAs
    • F. N. Hooge and M. Tacano, “Experimental studies of 1/f noise in n-GaAs,” Physica, vol. B190, pp. 145-149, 1993.
    • (1993) Physica , vol.190B , pp. 145-149
    • Hooge, F.N.1    Tacano, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.