1/f Noise and Radiation Effects in MOS Devices

IEEE Transactions on Electron Devices

Volumn 41, Issue 11, 1994, Pages 1953-1964

  Fleetwood, Daniel M ^a   Meisenheimer, Timothy L ^a   Scofield, John H ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b OBERLIN COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CORRELATION THEORY; CRYSTAL DEFECTS; ELECTRIC CHARGE; GATES (TRANSISTOR); NONDESTRUCTIVE EXAMINATION; OPTIMIZATION; RADIATION EFFECTS; SEMICONDUCTOR DEVICE MODELS; SIGNAL NOISE MEASUREMENT; SIGNAL TO NOISE RATIO; THERMAL EFFECTS;

ELECTROSTATIC CHARGING; ELECTROSTATIC DISCHARGING; NOISE LEVELS; OXIDE TRAP CHARGE; POST IRRADIATION THRESHOLD VOLTAGE SHIFTS;

MOSFET DEVICES;

EID: 0028547704     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.333811     Document Type: Article

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