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Volumn 33, Issue 9, 1986, Pages 1371-1376

Location of 1/f Noise Sources in BJT's and HBJT's—I. Theory

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - HETEROJUNCTIONS;

EID: 0022783948     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1986.22672     Document Type: Article
Times cited : (73)

References (20)
  • 1
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    • J. Kilmer, A. van der Ziel, and G. Bosman, “Presence of mobility fluctuation 1/f noise identified in silicon p+-n-p transistors,” Solid-State Electron., vol. 26, p. 71, 1983.
    • (1983) Solid-State Electron. , vol.26 , pp. 71
    • Kilmer, J.1    van der Ziel, A.2    Bosman, G.3
  • 3
    • 84941543191 scopus 로고
    • Identification of 1/f noise producing mechanisms in electronic devices
    • Univ. of Florida, Gainesville
    • J. Kilmer, “Identification of 1/f noise producing mechanisms in electronic devices,” Ph.D. dissertation, Univ. of Florida, Gainesville, 1984.
    • (1984) Ph.D. dissertation
    • Kilmer, J.1
  • 4
    • 84941529855 scopus 로고
    • Location of 1/f noise sources in bipolar transistors
    • A. D'Amico and P. Mazetti, Eds. New York: Elsevier
    • X. N. Zhang, A. van der Ziel, and M. Morkoc, “Location of 1/f noise sources in bipolar transistors,” in Noise in Physical Systems and 1/f Noise, A. D'Amico and P. Mazetti, Eds. New York: Elsevier, 1986, p. 487.
    • (1986) Noise in Physical Systems and 1/f Noise , pp. 487
    • Zhang, X.N.1    van der Ziel, A.2    Morkoc, M.3
  • 8
    • 0018989259 scopus 로고
    • 1/ f noise in p-n diodes
    • T. G. M. Kleinpenning, “1/ f noise in p-n diodes,” Physica, vol. 98B, p. 289, 1980.
    • (1980) Physica , vol.98B , pp. 289
    • Kleinpenning, T.G.M.1
  • 9
    • 0020090564 scopus 로고
    • Proposed discrimination between 1/f noise sources in transistors
    • A. van der Ziel, “Proposed discrimination between 1/f noise sources in transistors,” Solid-State Electron., vol. 25, p. 141, 1982.
    • (1982) Solid-State Electron. , vol.25 , pp. 141
    • van der Ziel, A.1
  • 11
    • 0022024794 scopus 로고
    • The Hooge parameters of n+-p-n and p+-n-p transistors
    • X. C. Zhu and A. van der Ziel, “The Hooge parameters of n+-p-n and p+-n-p transistors,” IEEE Trans. Electron Devices, vol. ED-32, p. 658, 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 658
    • Zhu, X.C.1    van der Ziel, A.2
  • 13
    • 0038244706 scopus 로고
    • Test for the presence of injection-extraction and Umklapp quantum 1/f noise in the collector of silicon transistors
    • A. D'Amico and P. Mazetti, Eds. New York: Elsevier
    • X. N. Zhang and A. van der Ziel, “Test for the presence of injection-extraction and Umklapp quantum 1/f noise in the collector of silicon transistors,” in Noise in Physical Systems and 1/f Noise, A. D'Amico and P. Mazetti, Eds. New York: Elsevier, 1986, p. 397.
    • (1986) Noise in Physical Systems and 1/f Noise , pp. 397
    • Zhang, X.N.1    van der Ziel, A.2
  • 14
    • 0009010624 scopus 로고
    • A determination of 1/f noise sources in semiconductor diodes and transistors
    • Princeton, NJ: RCA Labs
    • W. Fonger, “A determination of 1/f noise sources in semiconductor diodes and transistors,” in Transistors I. Princeton, NJ: RCA Labs, 1956, p. 239.
    • (1956) Transistors I , pp. 239
    • Fonger, W.1
  • 15
    • 0001468577 scopus 로고
    • Surface state related I/f noise in p-n junctions and MOS transistors
    • S. T. Hsu, D. J. Fitzgerald, and A. S. Grove, “Surface state related I/f noise in p-n junctions and MOS transistors,” Appl. Phys. Lett., vol. 12, p. 287, 1968.
    • (1968) Appl. Phys. Lett. , vol.12 , pp. 287
    • Hsu, S.T.1    Fitzgerald, D.J.2    Grove, A.S.3
  • 16
    • 33846604522 scopus 로고
    • The surface recombination model of p-n diode flicker noise
    • A. van der Ziel, “The surface recombination model of p-n diode flicker noise,” Physica, vol. 48, p. 242, 1970.
    • (1970) Physica , vol.48 , pp. 242
    • van der Ziel, A.1
  • 17
    • 84924017111 scopus 로고
    • Noise in solid state devices and lasers
    • —, “Noise in solid state devices and lasers,” Proc. IRE, vol. 58, p. 1178, 1970.
    • (1970) Proc. IRE , vol.58 , pp. 1178
    • van der Ziel, A.1
  • 18
    • 24544459259 scopus 로고
    • 1/f noise is no surface effect
    • F. N. Hooge, “1/f noise is no surface effect,” Phys. Lett., vol. A-29, 139, 1969.
    • (1969) Phys. Lett. , vol.A-29 , Issue.139
    • Hooge, F.N.1
  • 19
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    • Comments on 'A theory of Hooge parameters of solid state devices, '
    • R. D. Black, “Comments on 'A theory of Hooge parameters of solid state devices,’ ” IEEE Trans. Electron Devices, vol. ED-33, p. 332, 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , pp. 332
    • Black, R.D.1
  • 20
    • 49349139058 scopus 로고
    • l/f noise
    • F. N. Hooge, “l/f noise,” Physica B, vol. 83, p. 14, 1976.
    • (1976) Physica B , vol.83 , pp. 14
    • Hooge, F.N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.